We　report　on　the　electron　field　emission　(FE)　from　multi-layer　AlGaN　nanofilm　grown　by　pulsed　laser　deposition,　and　the　investigation　of　the　multi-layer　quantum　structure　effect　on　the　field　emission　performance.　The　results　show　that　the　as-grown　film　has　a　good　crystallinity,　and　the　thickness　values　of　GaN,　AlN,　and　GaN　film　are　25　nm,　50　nm,　and　25　nm,　respectively.　The　FE　measurement　indicates　that　compared　with　single　layer,　the　multilayer　filmhas　a　low　turn-on　field　and　large　threshold　current.　The　turn-on　filed　is　found　to　be　0.93　V/mu　m,　and　the　electric　current　density　reaches　to　30　mA/cm(2)　at　5.5　V/mu　m.　The　improvement　of　the　FE　performance　is　attributed　to　resonant　tunneling　in　the　quantum　well　structure,　and　the　accumulated　electrons　lower　the　effective　surface　barrier.　The　outstanding　performance　of　multi-layer　filed　emission　film　should　provide　a　feasible　technical　solution　for　large　current　and　high　power　density　thin　film　field　emission　device.