Through-Silicon-Via　(TSV)　is　considered　to　be　the　most　potential　solution　for　3D　electronic　packaging,　and　the　mechanical　properties　of　TSV-Cu　are　critical　for　TSV　reliability　improving.　In　this　paper,　to　make　deeply　understand　the　creep　behavior　of　TSV-Cu,　nanoindentation　creep　tests　were　conducted　to　obtain　its　creep　parameters.　At　first,　the　TSV　specimens　were　fabricated　by　means　of　a　typical　TSV　manufacturing　process.　Then　a　combination　programmable　procedure　of　the　constant　indentation　strain　rate　method　and　the　constant　load　method　was　employed　to　study　the　creep　behavior　of　TSV-Cu.　To　understand　the　influence　of　the　previous　loading　schemes,　including　the　different　values　of　the　indentation　strain　and　the　maximum　depths,　the　nanoindentation　creep　tests　under　different　loading　conditions　were　conducted.　The　values　of　creep　strain　rate　sensitivity　m　were　derived　from　the　corresponding　displacement-holding　time　curves,　and　the　mean　value　of　m　finally　determined　was　0.0149.　The　value　of　m　is　considered　no　obvious　correlation　with　the　different　indentation　strain　rates　and　the　maximum　depths　by　this　method.　Furthermore,　the　mechanism　for　the　room　temperature　creep　was　also　discussed,　and　the　grain　boundaries　might　play　an　significant　role　in　this　creep　behavior.