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作者:

Xu, Kun (Xu, Kun.) | Xie, Yiyang (Xie, Yiyang.) | Maa, Huali (Maa, Huali.) | Dua, Yinxiao (Dua, Yinxiao.) | Zeng, Fanguang (Zeng, Fanguang.) | Ding, Pei (Ding, Pei.) | Gao, Zhiyuan (Gao, Zhiyuan.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Sun, Jie (Sun, Jie.)

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EI Scopus SCIE

摘要:

In this paper, by virtue of one-dimensional ZnO nanorods and two-dimensional graphene film hybrid structures, both the enhanced current spreading and enhanced light extraction were realized at the same time. A 1 nm/1 nm Ni/Au layer was used as an interlayer between graphene and pGaN to form ohmic contact, which makes the device have a good forward conduction properties. Through the comparison of the two groups of making ZnO nanorods or not, it was found that the 30% light extraction efficiency of the device was improved by using the ZnO nanorods. By analysis key parameters of two groups such as the turn-on voltage, work voltage and reverse leakage current, it was proved that the method for preparing surface nano structure by hydrothermal method self-organization growth ZnO nanorods applied in GaN LEDs has no influence to device's electrical properties. The hybrid structure application in GaN LED, make an achievement of a good ohmic contact, no use of ITO and enhancement of light extraction at the same time, meanwhile it does not change the device structure, introduce additional process, worsen the electrical properties. (C) 2016 Elsevier Ltd. All rights reserved.

关键词:

LED ZnO GaN Nanorods Graphene

作者机构:

  • [ 1 ] [Xu, Kun]Zhengzhou Univ Aeronaut, Dept Math & Phys, Zhengzhou 450046, Peoples R China
  • [ 2 ] [Maa, Huali]Zhengzhou Univ Aeronaut, Dept Math & Phys, Zhengzhou 450046, Peoples R China
  • [ 3 ] [Dua, Yinxiao]Zhengzhou Univ Aeronaut, Dept Math & Phys, Zhengzhou 450046, Peoples R China
  • [ 4 ] [Zeng, Fanguang]Zhengzhou Univ Aeronaut, Dept Math & Phys, Zhengzhou 450046, Peoples R China
  • [ 5 ] [Ding, Pei]Zhengzhou Univ Aeronaut, Dept Math & Phys, Zhengzhou 450046, Peoples R China
  • [ 6 ] [Xie, Yiyang]Beijing Univ Technol, Sch Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Gao, Zhiyuan]Beijing Univ Technol, Sch Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 8 ] [Xu, Chen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 9 ] [Sun, Jie]Beijing Univ Technol, Sch Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 10 ] [Sun, Jie]Chalmers, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

通讯作者信息:

  • 孙捷

    [Xu, Kun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Sun, Jie]Beijing Univ Technol, Sch Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

SOLID-STATE ELECTRONICS

ISSN: 0038-1101

年份: 2016

卷: 126

页码: 5-9

1 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:175

中科院分区:4

被引次数:

WoS核心集被引频次: 10

SCOPUS被引频次: 9

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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