Graphene-on-silicon　(Gr/Si)　Schottky　junction　solar　cells　have　recently　attracted　considerable　interest　as　promising　candidates　for　low-cost　photovoltaic　applications.　However,　the　efficiency　of　Gr/Si　cells　is　still　much　lower　than　that　of　crystalline　Si　solar　cells,　which　is　mainly　attributed　to　the　interface　recombination　of　carriers　due　to　the　low　Gr/Si　Schottky　barrier.　Herein,　a　few-layer　hexagonal　boron　nitride　(h-BN)　is　introduced　to　engineer　the　Gr/Si　interface　for　improving　device　performance.　The　h-BN　can　act　as　an　effective　electron-blocking/hole-transporting　layer　due　to　its　unique　properties　and　appropriate　band　alignment　with　Si,　and　thus　the　interface　recombination　was　suppressed　and　the　open　circuit　voltage　was　remarkably　increased.　On　the　other　hand,　the　series　resistance　of　solar　cells　decreases　due　to　an　improving　conductivity　of　graphene　on　h-BN,　leading　to　an　increased　short　circuit　current　density.　Furthermore,　the　interface　defects　and　contamination　arising　from　the　layer-by-layer　transfer　process　can　be　eliminated　by　using　a　directly　grown　Gr/h-BN　heterostructure.　As　a　result,　a　maximum　efficiency　of　10.93%　was　achieved　by　combining　h-BN　interlayer　and　co-doping　of　graphene　with　Au　nanoparticles　and　HNO3,　which　shows　the　great　potential　of　the　novel　Gr/h-BN/Si　solar　cells.　(C)　2016　Elsevier　Ltd.　All　rights　reserved.