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作者:

Xu, Weidong (Xu, Weidong.) | McLeod, John A. (McLeod, John A..) | Yang, Yingguo (Yang, Yingguo.) | Wang, Yimeng (Wang, Yimeng.) | Wu, Zhongwei (Wu, Zhongwei.) | Bai, Sai (Bai, Sai.) | Yuan, Zhongcheng (Yuan, Zhongcheng.) | Song, Tao (Song, Tao.) | Wang, Yusheng (Wang, Yusheng.) | Si, Junjie (Si, Junjie.) | Wang, Rongbin (Wang, Rongbin.) | Gao, Xingyu (Gao, Xingyu.) | Zhang, Xinping (Zhang, Xinping.) (学者:张新平) | Liu, Lijia (Liu, Lijia.) | Sun, Baoquan (Sun, Baoquan.)

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摘要:

Organometallic lead halide perovskites are excellent light harvesters for high-efficiency photovoltaic devices. However, as the key component in these devices, a perovskite thin film with good morphology and minimal trap states is still difficult to obtain. Herein we show that by incorporating a low boiling point alkyl halide such as iodomethane (CH3I) into the precursor solution, a perovskite (CH3NH3PbI3-xClx) film with improved grain size and orientation can be easily achieved. More importantly, these films exhibit a significantly reduced amount of trap states. Record photoluminescence lifetimes of more than 4 mu s are achieved; these lifetimes are significantly longer than that of pristine CH3NH3PbI3-xClx films. Planar heterojunction solar cells incorporating these CH3I-mediated perovskites have demonstrated a dramatically increased power conversion efficiency compared to the ones using pristine CH3NH3PbI3-xClx. Photoluminescence, transient absorption, and microwave detected photoconductivity measurements all provide consistent evidence that CH3I addition increases the number of excitons generated and their diffusion length, both of which assist efficient carrier transport in the photovoltaic device. The simple incorporation of alkyl halide to enhance perovskite surface passivation introduces an important direction for future progress on high efficiency perovskite optoelectronic devices.

关键词:

iodomethane microwave detected photoconductivity perovskite solar cell photoluminescence lifetime surface passivation transient absorption trap state

作者机构:

  • [ 1 ] [Xu, Weidong]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 2 ] [McLeod, John A.]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 3 ] [Wu, Zhongwei]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 4 ] [Song, Tao]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 5 ] [Wang, Yusheng]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 6 ] [Wang, Rongbin]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 7 ] [Liu, Lijia]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 8 ] [Sun, Baoquan]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China
  • [ 9 ] [Yang, Yingguo]Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
  • [ 10 ] [Gao, Xingyu]Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Shanghai 201204, Peoples R China
  • [ 11 ] [Wang, Yimeng]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 12 ] [Zhang, Xinping]Beijing Univ Technol, Inst Informat Photon Technol, Beijing 100124, Peoples R China
  • [ 13 ] [Wang, Yimeng]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 14 ] [Zhang, Xinping]Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China
  • [ 15 ] [Si, Junjie]Zhejiang Univ, Dept Mat Sci & Engn, Cyrus Tang Ctr Sensor Mat & Applicat, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
  • [ 16 ] [Bai, Sai]Linkoping Univ, Dept Phys Chem & Biol IFM, Campus Valla, SE-58183 Linkoping, Sweden
  • [ 17 ] [Yuan, Zhongcheng]Linkoping Univ, Dept Phys Chem & Biol IFM, Campus Valla, SE-58183 Linkoping, Sweden

通讯作者信息:

  • [McLeod, John A.]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China;;[Liu, Lijia]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China;;[Sun, Baoquan]Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Mat, Suzhou 215123, Jiangsu, Peoples R China

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来源 :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

年份: 2016

期: 35

卷: 8

页码: 23181-23189

9 . 5 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:198

中科院分区:2

被引次数:

WoS核心集被引频次: 34

SCOPUS被引频次: 35

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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