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作者:

Huang, Hui (Huang, Hui.) (学者:黄晖) | Liu, Ke (Liu, Ke.) (学者:刘克) | Qi, Bing (Qi, Bing.) | Sorger, Volker J. (Sorger, Volker J..)

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摘要:

Single-mode waveguiding devices are desired for photonic integrated circuits. Previous studies on the single-mode conditions (SMCs) of a silicon-on-insulator (SOI) rib waveguide lack a comprehensive discussion to include a large to small range of cross-section cases, thus revealing the discrepancies of various determination methods. Here, we reanalyze the SMCs for large and small SOI rib waveguides by utilizing a finite-element method mode solver. The results are compared with both classical SMCs of Soref's expression and Pogossian's effective-index method, indicating that the constant value a shown in the Soref's analytical expression depends on the rib heights and polarizations. For transverse-electric polarized light and the waveguide height exceeding 5 mu m, alpha is approaching that of Soref's equation; if the height is <= 5 mu m, then alpha = 0.35, 0.4, 0.45, 0.7, and 1.0 are determined for the cases of 5, 3, 2, 0.8, and 0.4 mu m heights, respectively. However, for transverse-magnetic polarized light, if the height >= 2 mu m, alpha is constant (0.25) and independent on the rib heights, and alpha = 0.18 and 0.12 are attained for the cases of 0.8 and 0.4 heights, respectively. This detailed analysis indicates that a wider rib width can be used while preserving a SMC leading to devices with improved coupling efficiencies and reduced insertion losses for on-chip photonic circuits.

关键词:

single-mode conditions mode loss integrated photonics silicon rib waveguide Fill factor

作者机构:

  • [ 1 ] [Huang, Hui]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Ke]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Qi, Bing]Methodist Univ, Dept Comp Sci, Fayetteville, NC 28311 USA
  • [ 4 ] [Sorger, Volker J.]George Washington Univ, Dept Elect & Comp Engn, Sch Engn & Appl Sci, Washington, DC 20052 USA

通讯作者信息:

  • 黄晖

    [Huang, Hui]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Coll Elect Informat & Control Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF LIGHTWAVE TECHNOLOGY

ISSN: 0733-8724

年份: 2016

期: 16

卷: 34

页码: 3811-3817

4 . 7 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:166

中科院分区:2

被引次数:

WoS核心集被引频次: 27

SCOPUS被引频次: 31

ESI高被引论文在榜: 0 展开所有

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