Graphene　photodetectors　grown　by　chemical　vapor　deposition　are　fabricated　for　unfocused　laser　and　white　light　sensing.　The　unfocused　light　enlarges　the　illuminated　graphene　area　and　mimics　the　real-life　sensing　conditions,　yielding　a　responsivity　of　104　mA/W　at　room　temperature　without　enhancing　absorbance　by　waveguide　and　plasmonics.　The　devices　are　based　on　positive　photoconductivity　from　the　electron-hole　photocarrier　pairs　and　the　bolometric-effect-induced　negative　photoconductivity.　The　buried　off-center　local　gate　induces　a　net　internal　potential　in　the　graphene.　The　relative　strength　of　the　two　photoconductivities　depends　on　the　gate　voltage.　The　technology　is　scalable,　which　is　a　step　ahead　toward　real　applications.　(C)　2016　Optical　Society　of　America