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作者:

Guo, Wang (Guo, Wang.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Xu, Kun (Xu, Kun.) | Deng, Jun (Deng, Jun.) | Guo, Weiling (Guo, Weiling.) | Yurgens, August (Yurgens, August.) | Sun, Jie (Sun, Jie.)

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CPCI-S EI Scopus SCIE

摘要:

Molten copper is used to catalyze the graphene synthesis by chemical vapor deposition. The Cu has no grains above melting temperature, which is favorable for graphene growth. Using a vertical cold wall system, the deposition rate is drastically increased as compared with common hot-wall tube furnaces, pushing the method one step forward towards applications. A molybdenum-graphite Joule heater is used to avoid mechanical deformation of the carrier foil for the catalyst to ease the subsequent processes. The rapid deposition makes it possible to observe graphene growth on liquid Cu even at low pressure, where severe Cu evaporation simultaneously occurs. (C) 2015 Elsevier B.V. All rights reserved.

关键词:

Chemical vapor deposition Graphene Liquid copper

作者机构:

  • [ 1 ] [Guo, Wang]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Xu, Chen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Kun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Deng, Jun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Guo, Weiling]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Sun, Jie]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Yurgens, August]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden
  • [ 8 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, S-41296 Gothenburg, Sweden

通讯作者信息:

  • 徐晨 孙捷

    [Xu, Chen]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China;;[Sun, Jie]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China

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来源 :

SYNTHETIC METALS

ISSN: 0379-6779

年份: 2016

卷: 216

页码: 93-97

4 . 4 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:116

中科院分区:3

被引次数:

WoS核心集被引频次: 15

SCOPUS被引频次: 14

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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