To　enhance　the　J(c)　of　YBa2Cu3O7-X　(YBCO)　films　both　in　self-field　and　under　magnetic　field,　an　effective　strategy　is　to　introduce　artificial　pinning　centers　and　keep　a　good　YBCO　matrix　at　the　same　time.　Here,　we　propose　a　new　dopant:　LaAlO3　(LAO),　based　on　its　chemical　stability　and　small　mismatch　toward　YBCO.　A　series　of　YBCO　films　with　different　LAO　doping　contents　was　fabricated　on　LAO　single-crystal　substrates　by　metal　organic　deposition.　We　observed　by　X-ray　diffractometer　measurements　and　scanning　electron　microscopy　observations　that　although　a　large　amount　of　LAO　is　added,　YBCO　still　keeps　a　good　epitaxial　growth　relationship　with　LAO.　Compared　with　a　pure　YBCO　film,　the　J(c)　value　of　a　5.0%　LAO-doped　sample　is　enhanced　more　than　three　times　in　self-field　77　K　and　seven　times　at　77　K　and　1.5　T,　respectively.　These　results　indicate　that　LAO　doping　can　effectively　enhance　the　J(c)　of　YBCO　films　both　in　self-field　and　in　applied　magnetic　fields.