The　effect　of　lateral　structure　parameters　of　transistors　including　emitter　width,　emitter　length,　and　emitter　stripe　number　on　the　performance　parameters　of　the　active　inductor　(AI),　such　as　the　effective　inductance　L-s,　quality　factor　Q,　and　self-resonant　frequency　omega(0)　is　analyzed　based　on　0.35-mu　m　SiGe　BiCMOS　process.　The　simulation　results　show　that　for　AI　operated　under　fixed　current　density　J(C),　the　HBT　lateral　structure　parameters　have　significant　effect　on　Ls　but　little　influence　on　Q　and　omega(0),　and　the　larger　L-s　can　be　realized　by　the　narrow,　short　emitter　stripe　and　few　emitter　stripes　of　SiGe　HBTs.　On　the　other　hand,　for　AI　with　fixed　HBT　size,　smaller　J(C)　is　beneficial　for　AI　to　obtain　larger　L-s,　but　with　a　cost　of　smaller　Q　and　omega(0).　In　addition,　under　the　fixed　collector　current　I-C,　the　larger　the　size　of　HBT　is,　the　larger　L-s　becomes,　but　the　smaller　Q　and　omega(0)　become.　The　obtained　results　provide　a　reference　for　selecting　geometry　of　transistors　and　operational　condition　in　the　design　of　active　inductors.