Understanding　the　electrical　properties　of　defect-free　nanowires　with　so　different　structures　and　their　responses　under　deformation　are　essential　for　design　and　applications　of　nanodevices　and　strain　engineering.　In　this　study,　defect-free　zinc-blende-　and　wurtzite-structured　InAs　nanowires　were　grown　using　molecular　beam　epitaxy,　and　individual　nanowires　with　different　structures　and　orientations　were　carefully　selected　and　their　electrical　properties　and　electromechanical　responses　were　investigated　using　an　electrical　probing　system　inside　a　transmission.　electron　microscope.　Through　our　careful　experimental　design　and　detailed　analyses,　we　uncovered　several　extraordinary　physical　phenomena,　such　as　the　electromechanical　characteristics　are　dominated　by　the　nanowire　orientation,　rather　than　its　crystal　structure.　Our　results　provide　critical　insights　into　different　responses　induced　by　deformation　of　InAs　with　different　structures,　which　is　important　for　nanowire-based　devices.