In　this　paper　we　investigate　the　atomic　configurations,　electronic　structure　and　formation　energies　of　native　point　defects,　(such　as　vacancies　and　self-interstitials),　in　an　AlN/GaN　superlattice　(SL)　constructed　on　a　wurtzite　structure　along　a　[0001]　growth　direction.　Comprehensive　first-principle　calculations　based　on　the　density　functional　theory　(DFT)　are　used.　Cation　and　anion　vacancies　in　the　neutral　charge　state　are　calculated.　For　the　native　defects,　the　results　showed　that　the　most　favorable　configurations　are　the　cation　vacancies　at　the　interface　of　the　SL,　or　the　anion　vacancies　in　the　GaN　wells.　Considering　the　formation　energies　of　different　vacancies,　the　results　show　that　the　nitrogen　vacancy　has　the　lowest　formation　energy,　indicating　that　they　are　significantly　the　most　stable　configuration,　and　thus　should　be　expected　to　be　the　major　defect　in　a　AlN/GaN　superlattice.