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作者:

Fang, Yuan (Fang, Yuan.) | Sa, Baisheng (Sa, Baisheng.) | Miao, Naihua (Miao, Naihua.) | Sun, Zhimei (Sun, Zhimei.) | Wu, Bo (Wu, Bo.)

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Scopus SCIE

摘要:

The pressure induced twisted distortion of the diagonal-double tetrahedrons (DDTs) in Tc2O7 and the corresponding anomalous lattice variation under pressure were unraveled based on van der Waals (vdW) corrected density functional theory calculations. We show that the optPBE functional precisely represents the crystal structure of Tc2O7 with less than 0.5% volume overestimation. The flexibility of the Tc2O7 cell originating from the weak vdW interactions between the Tc2O7 DDTs is confirmed. On the contrary, we have found that the strong ionic bonding in the Tc2O7 DDT leads to the rigidity of the Tc2O7 DDT. According to the analysis of chemical bonding characterization, the pressure induced distortion of the Tc2O7 DDT leads to inhomogeneous Tc-O bonding distributions.

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作者机构:

  • [ 1 ] [Fang, Yuan]Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350108, Peoples R China
  • [ 2 ] [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350108, Peoples R China
  • [ 3 ] [Wu, Bo]Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350108, Peoples R China
  • [ 4 ] [Miao, Naihua]Beijing Univ Technol, Sch Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Miao, Naihua]Univ Liege, Inst Phys, Theoret Mat Phys, B-4000 Liege, Belgium
  • [ 6 ] [Sun, Zhimei]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China
  • [ 7 ] [Sun, Zhimei]Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China

通讯作者信息:

  • [Sa, Baisheng]Fuzhou Univ, Coll Mat Sci & Engn, Multiscale Computat Mat Facil, Fuzhou 350108, Peoples R China;;[Sun, Zhimei]Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China;;[Sun, Zhimei]Beihang Univ, Ctr Integrated Computat Mat Engn, Int Res Inst Multidisciplinary Sci, Beijing 100191, Peoples R China

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来源 :

CRYSTENGCOMM

ISSN: 1466-8033

年份: 2016

期: 2

卷: 18

页码: 328-333

3 . 1 0 0

JCR@2022

ESI学科: CHEMISTRY;

ESI高被引阀值:221

中科院分区:2

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 7

ESI高被引论文在榜: 0 展开所有

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