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作者:

Sun, Jie (Sun, Jie.) | Fan, Xing (Fan, Xing.) | Guo, Weiling (Guo, Weiling.) | Liu, Lihui (Liu, Lihui.) | Liu, Xin (Liu, Xin.) | Deng, Jun (Deng, Jun.) | Xu, Chen (Xu, Chen.) (学者:徐晨)

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摘要:

A capacitor-based circuit model is proposed to explain the electrochemical delamination of two-dimensional materials from their native substrates where produced gas bubbles squeeze into the interface. The delamination is actually the electric breakdown of the capacitor formed between the solution and substrate. To facilitate the procedure, the backside of the ubstrate has to be shielded so that the capacitor breakdown voltage can be reached. The screening effect can be induced either by nonreactive ions around the electrode or, more effectively, by an undetachable insulator. This mechanism serves as a guideline for the surface science and applications involving the bubbling delamination.

关键词:

electrochemical bubbling transfer graphene chemical vapor deposition

作者机构:

  • [ 1 ] [Sun, Jie]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Fan, Xing]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Guo, Weiling]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Liu, Xin]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Deng, Jun]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xu, Chen]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Sun, Jie]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden
  • [ 8 ] [Liu, Lihui]Chalmers Univ Technol, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden

通讯作者信息:

  • 孙捷

    [Sun, Jie]Beijing Univ Technol, Coll Elect Informat & Control Engn, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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相关关键词:

来源 :

SENSORS

ISSN: 1424-8220

年份: 2015

期: 12

卷: 15

页码: 31811-31820

3 . 9 0 0

JCR@2022

ESI学科: CHEMISTRY;

ESI高被引阀值:253

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 5

SCOPUS被引频次: 6

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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