Research Progress on Doping Process and Properties of β-Ga2 O3 Thin Film
英文摘要
β-Ga2 O3 thin film has been considered as one of the most promising materials in the field of photoelectric detector and light emitting devices because of its wide band gap , high stability and low production cost .However , the low conductivity of β-Ga2 O3 has limited its application in some fields . And improving the optical and electrical properties of β-Ga2 O3 thin films by doping method has attracted many researchers＇＇attention.This paper introduces several common doping methods and the effect of doping on the structure and photoelectric properties of β-Ga2 O3 thin film, and the future research work is also prospected .
