Both　the　charging　and　orbital　quantization　energies　of　InAs　quantum　dot　(QD)　typically　correspond　to　the　terahertz　(THz)　region.　In　this　letter,　under　the　asymmetric　THz　irradiations　on　two　leads,　electron　transport　through　a　two-level　InAs　QD　is　theoretically　discussed.　We　demonstrate　that　when　both　the　frequencies　and　amplitudes　of　THz　irradiations　on　two　leads　are　different　with　the　higher　asymmetry,　the　photon-electron　pump　effect　vanishes,　even　a　negative　platform　appears　on　the　left　of　the　Coulomb　peak　and　a　positive　platform　occurs　on　the　right　of　the　Coulomb　interaction　related　energy　level,　respectively.　This　behavior　is　favorable　for　the　design　of　THz　optoelectronic　device.　(C)　2015　Elsevier　B.V.　All　rights　reserved.