A　new　epitaxial　structure　of　AlGaInP-based　light-emitting　diode　(LED)　with　a　0.5-mu　m　GaP　window　layer　was　fabricated.　In　addition,　indium　tin　oxide　(ITO)　and　localized　Cr　deposition　beneath　the　p-pad　electrode　were　used　as　the　current　spreading　layer　and　the　Schottky　current　blocking　layer　(CBL),　respectively.　The　results　indicated　that　ITO　and　the　Schottky　CBL　improve　the　total　light　extraction　efficiency　by　relieving　the　current　density　crowding　beneath　the　p-pad　electrode.　At　the　current　of　20　mA,　the　light　output　power　of　the　novel　LED　was　40%　and　19%　higher　than　those　of　the　traditional　LED　and　the　new　epitaxial　LED　without　CBL.　It　was　also　found　that　the　novel　LED　with　ITO　and　CBL　shows　better　thermal　characteristics.