Amorphous　BiFeO3　thin　films　were　grown　on　an　indium　tin　oxide　glass　substrate　using　RF　magnetron　sputtering　at　room　temperature.　The　resistive　switching　behavior　of　amorphous　BiFeO3　thin　films　was　investigated.　The　Au/amorphous　BiFeO3/indium　tin　oxide　device　exhibited　the　stable　unipolar　resistive　switching　behavior　with　a　substantial　resistance　ratio　(larger　than　10(2))　between　low　and　high　resistance　states　and　the　excellent　retention　performance.　The　low　resistance　state　exhibited　a　linear　Ohmic　behavior,　while　the　high　resistance　state　conduction　could　be　ascribed　to　the　trap　controlled　space-charge　limited　conduction　mechanism.　Based　on　the　X-ray　photoelectron　spectroscopy,　the　observed　resistive　switching　behavior　was　mainly　attributed　to　the　electric　field　induced　migration　of　oxygen　vacancies.　(C)　2015　Elsevier　B.　V.　All　rights　reserved.