We　present　a　compact　passively　mode-locked　semiconductor　disk　laser　at　1045　nm.　The　gain　chip　without　any　post　processing　consists　of　16　compressively　strained　InGaAs　symmetrical　step　quantum　wells　in　the　active　region.　3-GHz　repetition　rate,　4.9-ps　pulse　duration,　and　30-mW　average　output　power　are　obtained　with　1.4　W　of　808-nm　incident　pump　power.　The　temperature　stability　of　the　laser　is　demonstrated　to　have　an　ideal　shift　rate　of　0.035　nm/K　of　the　lasing　wavelength.