• 综合
  • 标题
  • 关键词
  • 摘要
  • 学者
  • 期刊-刊名
  • 期刊-ISSN
  • 会议名称
搜索

作者:

Jiang, Z. N. (Jiang, Z. N..) | Zhang, F. P. (Zhang, F. P..) | Zhang, X. (Zhang, X..) | Lu, Q. M. (Lu, Q. M..) | Zhang, J. X. (Zhang, J. X..)

收录:

SCIE

摘要:

The rare earths doped Ca0.95RE0.05MnO3 (RE=Pr, Eu, Tb) oxide bulk materials are fabricated and the effects of rare earths doping within low content on the thermoelectric transport properties of the CaMnO3 oxide have been investigated. The results show that all doped oxide bulk materials are single phase with consolidated microstructure. The electrical resistivity is remarkably reduced on account of electron carrier density and mobility enhancement. The Seebeck coefficient is simultaneously reduced and the total thermal conductivity is decreased due to phonon thermal conduction confinement. The thermoelectric figure of merit ZT is improved with peak values of 0.12, 0.12 and 0.09 at 973 K for the Pr, Eu and Tb doped CaMnO3 oxide materials, respectively, which are very much higher than that of the undoped oxide material.

关键词:

CaMnO3 oxide Rare earth doping Thermoelectric properties

作者机构:

  • [ 1 ] [Jiang, Z. N.]Guangxi Normal Univ Natl, Dept Phys & Elect Engn, Chongzuo 532200, Guangxi, Peoples R China
  • [ 2 ] [Zhang, F. P.]Henan Univ Urban Construct, Inst Phys, Henan 467036, Peoples R China
  • [ 3 ] [Zhang, F. P.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Zhang, X.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Lu, Q. M.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, J. X.]Beijing Univ Technol, Coll Mat Sci & Engn, Chinese Minist Educ, Natl Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

通讯作者信息:

  • [Zhang, F. P.]Henan Univ Urban Construct, Inst Phys, Henan 467036, Peoples R China

电子邮件地址:

查看成果更多字段

相关关键词:

来源 :

INDIAN JOURNAL OF PURE & APPLIED PHYSICS

ISSN: 0019-5596

年份: 2015

期: 8

卷: 53

页码: 530-536

0 . 7 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:134

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 4

SCOPUS被引频次:

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

在线人数/总访问数:861/2910754
地址:北京工业大学图书馆(北京市朝阳区平乐园100号 邮编:100124) 联系我们:010-67392185
版权所有:北京工业大学图书馆 站点建设与维护:北京爱琴海乐之技术有限公司