In　this　study,　electromechanical　responses　induced　by　uniaxial　tensile　and　bending　deformation　were　obtained　for　p-type　＜　110　＞-oriented　Si　whiskers　by　in　situ　transmission　electron　microscopy　(TEM).　Ohmic　contacts　between　the　nanowires　(NWs)　and　electrodes　were　achieved　using　electron-beam-induced　carbon　deposition.　Results　show　that　enhancements　in　the　carrier　transport　properties　were　achieved　under　both　uniaxial　tensile　and　bending　strains.　With　the　strain　increased　to　1.5%　before　fracture,　the　improvement　in　the　conductance　reached　a　maximum,　which　was　as　large　as　24.2%,　without　any　sign　of　saturation.　On　the　other　hand,　under　5.8%　bending　strain,　a　67%　conductivity　enhancement　could　be　achieved.　This　study　should　provide　important　insight　into　the　performance　of　nanoscale-strained　Si.