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作者:

Xie, Hongyun (Xie, Hongyun.) | Liu, Shuo (Liu, Shuo.) | Zhang, Lianghao (Zhang, Lianghao.) | Jiang, Zhiyun (Jiang, Zhiyun.) | Zhao, Yanxiao (Zhao, Yanxiao.) | Chen, Liang (Chen, Liang.) | Zhang, Wanrong (Zhang, Wanrong.)

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EI Scopus SCIE

摘要:

A dual-band variable gain amplifier operating at 0.9 GHz and 2.4 GHz was designed based on high performance RF SiGe HBT for large amount of signals transmission and analysis. Current steering was adopted in gain-control circuit to get variable trans-conductance and then variable gain. Emitter degeneration and current reuse were considered in amplifying stage for low noise figure and low power dissipation respectively. A single-path circuit resonating at two frequency points simultaneously was designed for input impedance matching. PCB layout parasitic effects, especially the via parasitic inductor, were analyzed theoretically and experimentally and accounted for using electro-magnetic (EM) simulation. The measurement results show that a dynamic gain control of 26 dB/16 dB in a control voltage range of 0.0-1.4 V has been achieved at 0.9/2.4 GHz respectively. Both S-11 and S-22 are below than -10 dB in all the control voltage range. Noise figures at both 0.9 GHz and 2.4 GHz are lower than 5 dB. Total power dissipation of the dual-band VGA is about 16.5 mW at 3 V supply. (C) 2015 Elsevier Ltd. All rights reserved.

关键词:

Dual-band Low dissipation Low noise SiGe HBT Variable gain

作者机构:

  • [ 1 ] [Xie, Hongyun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Liu, Shuo]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Zhang, Lianghao]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Jiang, Zhiyun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Zhao, Yanxiao]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Zhang, Wanrong]Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Chen, Liang]Taishan Univ, Sch Phys & Elect Engn, Tai An 271000, Shandong, Peoples R China

通讯作者信息:

  • [Xie, Hongyun]Beijing Univ Technol, Sch Elect Informat & Control Engn, Pingleyuan 100, Beijing 100124, Peoples R China

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来源 :

MICROELECTRONICS JOURNAL

ISSN: 0026-2692

年份: 2015

期: 7

卷: 46

页码: 626-631

2 . 2 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:114

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次: 3

ESI高被引论文在榜: 0 展开所有

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