The　Bi0.8Ba0.2FeO3　(BBFO)　thin　film　was　deposited　on　the　conducting　Nb:SrTiO3　(NSTO)　(100)　single　crystal　substrate　by　pulsed　laser　deposition.　Nonvolatile　bipolar　resistive　switching　effect　was　observed　in　an　Au/BBFO/NSTO　capacitor　structure.　By　changing　the　polarity　of　the　external　pulsed　voltage,　the　device　could　be　switched　reversibly　between　two　stable　resistance　states.　The　resistive　ratio　is　about　10　at　a　read　voltage　of　-0.5　V　after　applying　+/-　1.5　V　pulse　voltages.　The　mechanism　of　the　resistive　switching　behavior　could　be　attributed　to　the　electric　field　induced　migration　of　oxygen　vacancies,　which　changes　the　height　and　width　of　the　barrier　at　the　BBFO/NSTO　interface.　(C)　2015　Elsevier　Ltd.　All　rights　reserved.