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作者:

Xun, Meng (Xun, Meng.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Deng, Jun (Deng, Jun.) | Xie, Yiyang (Xie, Yiyang.) | Jiang, Guoqing (Jiang, Guoqing.) | Wang, Jun (Wang, Jun.) | Xu, Kun (Xu, Kun.) | Chen, Hongda (Chen, Hongda.)

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Scopus SCIE

摘要:

In-phase coherently coupled vertical cavity surface emitting laser (VCSEL) hexagonal arrays were fabricated using proton implantation. The near-field profiles, far-field profiles, and emission spectra under different injection currents were tested and analyzed. The arrays can maintain in-phase single mode in a considerably wide current range from 10 mA (I-th) to 35 mA (3.5 x I-th), exhibiting excellent beam quality. The far-field divergence angle of the in-phase coupled array is 2.5 degrees. Approximately 29% of total power is localized in the central lobe. Compared with square structure arrays, hexagonal arrays can maintain a more stable in-phase mode because of stronger coupling among the elements. The maximum output power of 4.9 mW was obtained under pulse wave condition. The simulation of far-field was carried out to match the in-phase operation test results. The performance enhancement of the array is attainable if the condition of heat dissipation is better. The process procedure of proton implantation is relatively simple and of low cost. It can be used as an alternative to coherently coupled array implementations. (C) 2015 Optical Society of America

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作者机构:

  • [ 1 ] [Xun, Meng]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Deng, Jun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Jiang, Guoqing]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Jun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xu, Kun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Xie, Yiyang]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 8 ] [Chen, Hongda]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

通讯作者信息:

  • 徐晨

    [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

OPTICS LETTERS

ISSN: 0146-9592

年份: 2015

期: 10

卷: 40

页码: 2349-2352

3 . 6 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:190

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 14

SCOPUS被引频次: 18

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

近30日浏览量: 2

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