The　electrical　characteristics　of　AlGaN/GaN　high　electron　mobility　transistors　under　the　application　of　uniform　in-plane　tensile　and　compressive　stress　were　measured.　The　results　demonstrate　the　change　of　the　drain-source　I-ds-V-ds　characteristics　as　a　function　of　the　external　stress.　The　output　current　at　V-ds　=　10　V　increases　linearly　with　the　stress　with　the　slope　about　3　x　10(-6)　A　MPa-1.　It　is　associated　with　the　piezoelectric　effect　and　kink　effect.　Moreover,　the　magnitude　of　the　kink　effect　is　found　to　be　affected　by　the　stress.　It　displays　a　linear　changing　trend　with　the　slope　of　3.3　x　10(-4)　mS　MPa-1　within　the　stress　level.　The　energy　band　structure　is　suggested　to　be　responsible　for　the　dependence　of　the　kink　effect　on　the　stress.　(C)　2015　Elsevier　Ltd.　All　rights　reserved.