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作者:

Wang, Jinshu (Wang, Jinshu.) (学者:王金淑) | Cui, Yuntao (Cui, Yuntao.) | Liu, Wei (Liu, Wei.) | Wang, Yiman (Wang, Yiman.) | Yang, Fan (Yang, Fan.) | Zhou, Fan (Zhou, Fan.) | Zhou, Meiling (Zhou, Meiling.)

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EI Scopus SCIE

摘要:

Scandia-doped-impregnated (SDI) cathodes were fabricated with scandia-doped tungsten powders using spray drying (SD) combined with two-step reduction in hydrogen atmosphere. The temperature-programmed reduction results show that the addition of Sc2O3 leads to a decrease of the reduction temperature of scandia-doped tungsten oxide powders. Using the obtained scandia-doped tungsten powders with homogenous distribution of nanosized scandia, a submicrometer porous matrix cathode composed of tungsten grains with active substances distributing uniformly around these grains has been obtained. For cathodes with the above matrices and impregnated with 411 or 612 Ba, Ca aluminates (named SDI/SD-411 or SDI/SD-612 cathodes, respectively) and space charge limited current densities of similar to 72.5 A/cm(2) have been reliably reached at 900 degrees C-b. After proper activation, the cathode surface is covered by a Ba-Sc-O active substance layer with preferable atomic ratios, leading to its good emission property. The average evaporation rate of 8.45 x 10(-9) gcm(-2) s(-1) at 1150 degrees C-b for SDI/SD-612 cathode is the lowest one among Ba-W, W/Re/Os-M, SG-411 (the scandia-doped cathode fabricated by sol-gel method with impregnating 411 aluminates), and SDI/SD-612 cathodes.

关键词:

Evaporation behavior scandate cathode thermionic emission

作者机构:

  • [ 1 ] [Wang, Jinshu]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 2 ] [Cui, Yuntao]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Wei]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 4 ] [Wang, Yiman]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Yang, Fan]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Zhou, Fan]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China
  • [ 7 ] [Zhou, Meiling]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

通讯作者信息:

  • 王金淑

    [Wang, Jinshu]Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Beijing 100124, Peoples R China

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来源 :

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 0018-9383

年份: 2015

期: 5

卷: 62

页码: 1635-1640

3 . 1 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:114

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 20

SCOPUS被引频次: 23

ESI高被引论文在榜: 0 展开所有

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