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作者:

Liang, Hao (Liang, Hao.) | Zhang, Wei (Zhang, Wei.) | Huang, Jiale (Huang, Jiale.) | Yang, Shengqi (Yang, Shengqi.) | Gupta, Pallav (Gupta, Pallav.)

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EI Scopus SCIE

摘要:

The increasing power consumption of integrated circuits (ICs) enabled by technology scaling requires more efficient heat dissipation solutions to improve overall chip reliability and reduce hotspots. Rapidly growing 3-D IC technology strengthens the requirement with more devices stacked per unit area. Thermal interface material (TIM) and MicroChannel are widely adopted strategies to resolve the heat dissipation problem. In recent years, carbon nanotubes (CNTs) have been proposed as a promising TIM due to their superior thermal conductivity. Several CNT-based thermal structures for improving chip heat dissipation have been proposed and demonstrated significant temperature reduction. In this project, we developed an improved CNT TIM structure which includes a CNT grid and thermal vias. It collaborates with MicroChannel to dissipate heat more efficiently in 3-D chips and at the same time, obtain more uniform chip thermal profiles. We present simulation-based experimental results that indicate up to 19.88% peak temperature reduction, 7.81% average temperature reduction, over 66% maximum temperature difference reduction on chip and 17.26% improvement in chip reliability for IBM-PLACE 2.0 circuit benchmarks, showing the effectiveness of our proposed thermal structure for resolving thermal challenge and improving chip reliability in 3-D IC.

关键词:

Thermal analysis thermal control

作者机构:

  • [ 1 ] [Liang, Hao]Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
  • [ 2 ] [Zhang, Wei]Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China
  • [ 3 ] [Huang, Jiale]NVIDIA Semicond Technol Corp, Shanghai 100004, Peoples R China
  • [ 4 ] [Yang, Shengqi]Beijing Univ Technol, Sch Software Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Gupta, Pallav]Intel Corp, Core CAD Technol, Folsom, CA 95630 USA

通讯作者信息:

  • [Liang, Hao]Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Hong Kong, Peoples R China

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来源 :

IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

ISSN: 1063-8210

年份: 2015

期: 4

卷: 23

页码: 731-742

2 . 8 0 0

JCR@2022

ESI学科: ENGINEERING;

ESI高被引阀值:174

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 1

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

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