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作者:

Ge, Hai-Liang (Ge, Hai-Liang.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Xu, Kun (Xu, Kun.) | Xun, Meng (Xun, Meng.) | Wang, Jun (Wang, Jun.) | Liu, Jie (Liu, Jie.)

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摘要:

The two-dimensional (2D) triangle lattice air hole photonic crystal (PC) GaN-based light-emitting diodes (LED) with double-layer graphene transparent electrodes (DGTE) have been produced. The current spreading effect of the double-layer graphene (GR) on the surface of the PC structure of the LED has been researched. Specially, we found that the part of the graphene suspending over the air hole of the PC structure was of much higher conductivity, which reduced the average sheet resistance of the graphene transparent conducting electrode and improved the current spreading of the PC LED. Therefore, the work voltage of the DGTE-PC LED was obviously decreased, and the output power was greatly enhanced. The COMSOL software was used to simulate the current density distribution of the samples. The results show that the etching of PC structure results in the degradation of the current spreading and that the graphene transparent conducting electrode can offer an uniform current spreading in the DGTE-PC LED.

关键词:

Graphene GaN-based light-emitting diodes Photonic crystal

作者机构:

  • [ 1 ] [Ge, Hai-Liang]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Xu, Kun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Xun, Meng]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, Jun]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Liu, Jie]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • 徐晨

    [Xu, Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

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来源 :

NANOSCALE RESEARCH LETTERS

ISSN: 1931-7573

年份: 2015

卷: 10

ESI学科: PHYSICS;

ESI高被引阀值:190

JCR分区:1

中科院分区:3

被引次数:

WoS核心集被引频次: 9

SCOPUS被引频次: 8

ESI高被引论文在榜: 0 展开所有

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中文被引频次:

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