An　efficient　approach　for　enhancing　the　surface　antireflection　is　proposed,　in　which　a　black　silicon　is　fabricated　by　a　femtosecond　laser　in　alkaline　solution.　In　the　experiment,　2　wt%　NaOH　solution　is　formulated　at　room　temperature　(22　+/-　A　1　A　degrees　C).　Then,　a　polished　silicon　is　scanned　via　femtosecond　laser　irradiation　in　2　wt%　NaOH　solution.　Jungle-like　microstructures　on　the　black　silicon　surface　are　characterized　using　an　atomic　force　microscopy.　The　reflectance　of　the　black　silicon　is　measured　at　the　wavelengths　ranging　from　400　to　750　nm.　Compared　to　the　polished　silicon,　the　black　silicon　can　significantly　suppress　the　optical　reflection　throughout　the　visible　region　(＜　5　%).　Meanwhile,　we　also　investigated　the　factors　of　the　black　silicon,　including　the　femtosecond　laser　pulse　energy　and　the　scanning　speed.　This　method　is　simple　and　effective　to　acquire　the　black　silicon,　which　probably　has　a　large　advantage　in　fast　and　cost-effective　black　silicon　fabrication.