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Author:

Gou, Xianfang (Gou, Xianfang.) | Li, Xiaoyan (Li, Xiaoyan.) | Zhou, Su (Zhou, Su.) | Wang, Shaoliang (Wang, Shaoliang.) | Fan, Weitao (Fan, Weitao.) | Huang, Qingsong (Huang, Qingsong.)

Indexed by:

Scopus SCIE

Abstract:

Voltage bias of several hundred volts which are applied between solar cells and module frames may lead to significant power losses, so-called potential-induced degradation (PID), in normal photovoltaic (PV) installations system. Modules and minimodules are used to conduct PID test of solar cells. The test procedure is time consuming and of high cost, which cannot be used as process monitoring method during solar cells fabrication. In this paper, three kinds of test including minimodule, R-sh, and V-Q test are conducted on solar cells or wafers with SiNx of different refractive index. All comparisons between test results of R-sh, V-Q, and minimodule tests have shown equal results. It is shown that R-sh test can be used as quality inspection of solar cells and V-Q test of coated wafer can be used as process control of solar cells.

Keyword:

Author Community:

  • [ 1 ] [Gou, Xianfang]Beijing Univ Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Li, Xiaoyan]Beijing Univ Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Gou, Xianfang]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 4 ] [Zhou, Su]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 5 ] [Fan, Weitao]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 6 ] [Huang, Qingsong]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China
  • [ 7 ] [Wang, Shaoliang]Beijing Jiaotong Univ, Beijing 100044, Peoples R China

Reprint Author's Address:

  • [Zhou, Su]CECEP Solar Energy Technol Zhenjiang Co Ltd, Zhenjiang 212132, Peoples R China

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Source :

INTERNATIONAL JOURNAL OF PHOTOENERGY

ISSN: 1110-662X

Year: 2015

Volume: 2015

3 . 2 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:190

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 8

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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