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作者:

Xun, Meng (Xun, Meng.) | Xu, Chen (Xu, Chen.) (学者:徐晨) | Xie, Yiyang (Xie, Yiyang.) | Deng, Jun (Deng, Jun.) | Xu, Kun (Xu, Kun.) | Chen, Hongda (Chen, Hongda.)

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EI Scopus SCIE

摘要:

We have investigated the dependence of modal behavior on the structures of 2-D implant-defined coherently coupled vertical cavity surface-emitting laser (VCSEL) arrays experimentally and theoretically. 2-D VCSEL arrays with different interelement spacing have been designed and fabricated. Through the experimental analysis of near-field and far-field distribution, in-phase and out-of-phase mode are obtained from the arrays, depending on the interelement spacing. Considering the effect of thermal and carrier injection, the refractive index distribution of the arrays under operation is calculated. Then, FDTD Solutions software is employed to calculate the near-field distributions of the arrays through establishing a simplified refractive index model. The simulation results agree well with the experiments. Meanwhile, according to the phase characteristics of in-phase and out-of-phase mode, as observed from the near-field profiles, the far-field distributions are calculated, in an excellent agreement with the experiments.

关键词:

Optical coupling semiconductor laser arrays surface-emitting laser

作者机构:

  • [ 1 ] [Xun, Meng]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 2 ] [Xu, Chen]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 3 ] [Deng, Jun]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 4 ] [Xu, Kun]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China
  • [ 5 ] [Xie, Yiyang]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
  • [ 6 ] [Chen, Hongda]Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

通讯作者信息:

  • [Xun, Meng]Beijing Univ Technol, Key Lab Optoelect Technol, Minist Educ, Beijing 100124, Peoples R China

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来源 :

IEEE JOURNAL OF QUANTUM ELECTRONICS

ISSN: 0018-9197

年份: 2015

期: 1

卷: 51

2 . 5 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:134

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 18

SCOPUS被引频次: 20

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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