Boron-doped　carbon　nanoflakes　were　directly　synthesized　by　hot　filament　chemical　vapor　deposition,　nontoxic　boron　carbide　was　used　as　the　boron　source.　The　results　of　scanning　electron　microscopy　(SEM),　micro-Raman　spectroscopy,　Fourier　transform　infrared　spectroscopy　(FTIR),　X-ray　photoelectron　spectroscopy　(XPS)　and　transmission　electron　microscopy　(TEM)　indicate　that　boron　is　effectively　doped　in　the　carbon　nanoflakes.　The　number　of　defects　as　well　as　the　density　of　the　carbon　nanoflakes　is　increased　due　to　the　doping　process.　The　photoluminescence　(PL)　properties　of　carbon　nanoflakes　with　and　without　boron　doping　were　studied　at　room　temperature,　the　325　nm　line　of　He-Cd　laser　was　used　as　the　excitation　source.　The　PL　results　reveal　that　the　carbon　nanoflakes　with　and　without　doping　of　boron　can　generate　both　weak　blue　and　strong　green　PL　bands.　The　results　also　show　a　blue　shift　of　PL　bands　and　an　enhanced　PL　intensity　after　boron　doping.　This　is　attributed　to　an　increase　in　the　band　gap　of　carbon　nanoflakes　upon　boron　incorporation.　These　results　improve　our　knowledge　of　the　synthesis　and　optical　properties　of　graphene-based　materials　and　contribute　to　the　development　of　graphene-based　optoelectronic　devices.