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作者:

Zuo, Yong (Zuo, Yong.) | Ma, Limin (Ma, Limin.) | Liu, Sihan (Liu, Sihan.) | Shu, Yutian (Shu, Yutian.) | Guo, Fu (Guo, Fu.) (学者:郭福)

收录:

EI Scopus SCIE

摘要:

Solder joints in practical service conditions are usually subjected to simultaneous current stressing and thermal cycling. At present, most studies focus on either thermal cycling or current stressing. Therefore, the existence of coupling between these two factors remains in doubt. In this study, experiments are conducted to reveal the effect(s) of current density magnitude on the thermomechanical fatigue (TMF) behavior of solder joints. At the early stage of coupling stressing, damage accumulation contributed to TMF at both high and low current densities. Fatigue micro-cracks readily nucleated and propagated along the boundary of Sn-rich and Bi-rich phases. Fatigue crack formation could be retarded through mass transport and Joule heating effects at an early stage. At later stages, the high current density led to electromigration (EM), which played an important role in the failure process by changing interfacial mechanics due to the mass transport. EM led to the final failure of solder joint, where fracture was located at the interface between the intermetallic compound and solder.

关键词:

Coupling effect electromigration thermomechanical fatigue

作者机构:

  • [ 1 ] [Zuo, Yong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Liu, Sihan]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Shu, Yutian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

通讯作者信息:

  • [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

年份: 2015

期: 1

卷: 44

页码: 597-603

2 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:224

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 15

SCOPUS被引频次: 16

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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