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[期刊论文]

Doping transition metal ions as a method for enhancement of ablation rate in femtosecond laser irradiation of silicate glass

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Author:

Fang, Juqiang (Fang, Juqiang.) | Jiang, Lan (Jiang, Lan.) | Cao, Qiang (Cao, Qiang.) | Unfold

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EI Scopus SCIE PKU CSCD

Abstract:

We present a doping method to improve the femtosecond laser ablation rate and promote ablation selectivity. Doping transition metal ions, Co2+ or Cu2+, in silicate glass apparently change absorption spectroscopy and induce resonant absorption at wavelengths of 600 and 800 nm, respectively. Comparing with femtosecond laser processing of the same glass without doping, we find that the threshold fluence decreases and the ablation rate increases in resonant absorption in doped silicate glass. Resonant absorption effectively increases multiphoton ionization for seed-free electron generation, which in turn enhances avalanche ionization.

Author Community:

  • [ 1 ] [Fang, Juqiang]Beijing Inst Technol, Sch Mech Engn, NanoMfg Fundamental Res Joint Lab Natl Sci Fdn Ch, Beijing 100081, Peoples R China
  • [ 2 ] [Jiang, Lan]Beijing Inst Technol, Sch Mech Engn, NanoMfg Fundamental Res Joint Lab Natl Sci Fdn Ch, Beijing 100081, Peoples R China
  • [ 3 ] [Cao, Qiang]Beijing Inst Technol, Sch Mech Engn, NanoMfg Fundamental Res Joint Lab Natl Sci Fdn Ch, Beijing 100081, Peoples R China
  • [ 4 ] [Yuan, Yanping]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Qu, Liangti]Beijing Inst Technol, Sch Chem, Minist Educ, Key Lab Cluster Sci, Beijing 100081, Peoples R China
  • [ 6 ] [Duan, Ji'an]Cent S Univ, State Key Lab High Performance Complex Mfg, Changsha 410083, Hunan, Peoples R China
  • [ 7 ] [Lu, Yongfeng]Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

Reprint Author's Address:

  • [Cao, Qiang]Beijing Inst Technol, Sch Mech Engn, NanoMfg Fundamental Res Joint Lab Natl Sci Fdn Ch, Beijing 100081, Peoples R China

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Source :

CHINESE OPTICS LETTERS

ISSN: 1671-7694

Year: 2014

Issue: 12

Volume: 12

3 . 5 0 0

JCR@2022

ESI Discipline: PHYSICS;

ESI HC Threshold:202

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 7

SCOPUS Cited Count: 9

30 Days PV: 3

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