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作者:

Zuo, Yong (Zuo, Yong.) | Ma, Limin (Ma, Limin.) | Guo, Fu (Guo, Fu.) (学者:郭福) | Qiao, Lei (Qiao, Lei.) | Shu, Yutian (Shu, Yutian.) | Lee, Andree (Lee, Andree.) | Subramanian, K. N. (Subramanian, K. N..)

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EI Scopus SCIE

摘要:

Electromigration (EM), creep, and thermal fatigue (TF) are the most important aspects of the reliability of electronic solder joints, the failure mechanisms of which used to be investigated separately. However, current, mechanical loading, and temperature fluctuation usually co-exist under real service conditions, especially as the magnitude of current density is increasing with joint miniaturization. The importance of EM can no longer be simply ignored when analyzing the creep and TF behavior of a solder joint. The published literature reports that current density substantially changes creep rate, but the intrinsic mechanism is still unclear. Hence, the purpose of this study was to investigate the effects of EM on the creep and TF behavior of Sn58Bi solder joints by analyzing the evolution of electrical resistance and microstructure. The results indicated that EM shortens the lifetime of creep or TF of Sn58Bi solder joints. During creep, EM delays or suppresses the cracking and deforming process, so fracture occurs at the cathode interface. During TF, EM suppresses the cracking process and changes the interfacial structure.

关键词:

creep electrical resistance electromigration Sn58Bi thermal fatigue

作者机构:

  • [ 1 ] [Zuo, Yong]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zuo, Yong]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 3 ] [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Ma, Limin]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 5 ] [Guo, Fu]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Guo, Fu]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 7 ] [Qiao, Lei]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 8 ] [Qiao, Lei]Michigan State Univ, E Lansing, MI 48824 USA
  • [ 9 ] [Shu, Yutian]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 10 ] [Shu, Yutian]Michigan State Univ, E Lansing, MI 48824 USA

通讯作者信息:

  • [Ma, Limin]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China

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来源 :

JOURNAL OF ELECTRONIC MATERIALS

ISSN: 0361-5235

年份: 2014

期: 12

卷: 43

页码: 4395-4405

2 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:256

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 16

SCOPUS被引频次: 17

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

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