收录：
摘要：
In this work, n-type amorphous silicon oxide thin films were deposited by RF-PECVD method using a gas mixture of SiH4, CO2, H-2, and PH3. The deposition rate, refractive index, band gap, crystalline volume fraction, and conductivity of the silicon oxide thin films were determined and analyzed. The film with refractive index of 1.99, band gap of 2.6eV and conductivity of 10(-7) S/cm was obtained, which was suitable for the intermediate reflector layer.
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通讯作者信息：
来源 ：
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
ISSN： 1000-2413
年份： 2014
期： 5
卷： 29
页码： 900-905
1 . 6 0 0
JCR@2022
ESI学科： MATERIALS SCIENCE;
ESI高被引阀值：341
JCR分区：4
中科院分区：4
