In　this　work,　n-type　amorphous　silicon　oxide　thin　films　were　deposited　by　RF-PECVD　method　using　a　gas　mixture　of　SiH4,　CO2,　H-2,　and　PH3.　The　deposition　rate,　refractive　index,　band　gap,　crystalline　volume　fraction,　and　conductivity　of　the　silicon　oxide　thin　films　were　determined　and　analyzed.　The　film　with　refractive　index　of　1.99,　band　gap　of　2.6eV　and　conductivity　of　10(-7)　S/cm　was　obtained,　which　was　suitable　for　the　intermediate　reflector　layer.