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作者:

Yan, Yinzhou (Yan, Yinzhou.) (学者:闫胤洲) | Zeng, Yong (Zeng, Yong.) | Wu, Yan (Wu, Yan.) | Zhao, Yan (Zhao, Yan.) (学者:赵艳) | Ji, Lingfei (Ji, Lingfei.) (学者:季凌飞) | Jiang, Yijian (Jiang, Yijian.) (学者:蒋毅坚) | Li, Lin (Li, Lin.)

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摘要:

Here we report strong enhancement in ultraviolet-photoluminescence (UV-PL) of ZnO thin films (grown on a SiC substrate) covered by monolayer dielectric fused silica or polystyrene microspheres with diameters ranging from 0.5 to 7.5 mu m. The excited light scatted in the film is collected by the microspheres to stimulate whispering gallery modes, by which the internal quantum efficiency of spontaneous emission is enhanced. Meanwhile, the microsphere monolayer efficiently couples emitted light energy from the luminescent film to the far-field for PL detection. A UV-PL enhancement up to 10-fold via a 5-mu m-diameter microsphere monolayer is experimentally demonstrated in this work. The unique optical property of microsphere in photoluminescence (PL) enhancement makes them promising for high-sensitivity PL measurements as well as design of photoelectric devices with low loss and high efficiency. (C) 2014 Optical Society of America

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作者机构:

  • [ 1 ] [Yan, Yinzhou]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 2 ] [Zeng, Yong]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wu, Yan]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Zhao, Yan]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 5 ] [Ji, Lingfei]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 6 ] [Jiang, Yijian]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China
  • [ 7 ] [Li, Lin]Univ Manchester, Sch Mech Aerosp & Civil Engn, Laser Proc Res Ctr, Manchester M13 9PL, Lancs, England

通讯作者信息:

  • 蒋毅坚

    [Jiang, Yijian]Beijing Univ Technol, Inst Laser Engn, Beijing 100124, Peoples R China

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来源 :

OPTICS EXPRESS

ISSN: 1094-4087

年份: 2014

期: 19

卷: 22

页码: 23552-23564

3 . 8 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:202

JCR分区:1

中科院分区:2

被引次数:

WoS核心集被引频次: 32

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