收录:
摘要:
ZnO thin films were grown by pulsed laser deposition on titanium substrates at different substrate temperatures ranging from 300 to 700 degrees C. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence, and Raman spectroscopy are employed to investigate the change of properties. XRD, XPS, and Raman data showed that the films consisted of TiO2 at high substrate temperature, which will deteriorate the crystallization quality of ZnO films. The optimum temperature for the growth of ZnO films on the Ti substrate is about 500 degrees C in this paper. The ZnO films grown on titanium substrate can be used in direct current, microwave, and medical applications. Copyright (C) 2014 John Wiley & Sons, Ltd.
关键词:
通讯作者信息:
电子邮件地址:
来源 :
SURFACE AND INTERFACE ANALYSIS
ISSN: 0142-2421
年份: 2014
期: 9
卷: 46
页码: 602-606
1 . 7 0 0
JCR@2022
ESI学科: PHYSICS;
ESI高被引阀值:202
JCR分区:3
中科院分区:4