We　fabricated　a　series　of　(In2O3)(0.75)(Ga2O3)(0.1)(ZnO)(0.15)　thin　films　using　the　pulsed　laser　deposition　(PLO)　method　at　room　temperature　under　same　oxygen　pressure,　and　annealed　these　films　at　different　temperatures　from　RI　to　300　degrees　C　under　vacuum.　The　effect　of　thermal　annealing　on　the　properties　of　In-Ga-Zn-O　(IGZO)　films　was　studied.　The　structural,　optical　and　electrical　properties　of　the　films　were　measured　by　various　diagnosis　tools.　Surface　morphology　of　all　IGZO　thin　films　was　examined　by　Atomic　Force　Microscopy　(AFM).　X-ray　diffraction　(XRD)　patterns　showed　that　the　mixed　crystalline　and　amorphous　phases　appear　in　the　as-grown　film　and　in　the　films　annealed　temperatures　from　100　degrees　C　to　300　degrees　C.　The　maximum　carrier　mobility　was　32　cm(2)/(V　s)　in　the　film　annealed　at　300　degrees　C.　The　transmission　spectrum　of　film　annealed　at　300　degrees　C　shows　the　better　light　transmission　and　narrower　band　gap.　The　IGZO　thin　films　with　high　mobility　and　transparency　are　highly　desirable　for　the　fabrication　of　flat　panel　display　devices.　(C)　2014　Elsevier　Ltd.　All　rights　reserved.