Crystallization　behaviors　of　alpha-GST　films　with　the　thickness　of　80　and　30　nm　induced　by　an　ultraviolet　pulse　laser　were　investigated　by　using　TEM　integrated　with　SAED.　Firstly,　crystalline　phase　morphologies　were　shown　and　analyzed.　Both　plate　grains　and　spherical　grains　were　found　for　80　nm　thick　film,　while　only　plate　grains　were　found　for　30　nm　thick　film.　Then　the　relationship　between　the　grain　size　and　laser　fluence　for　the　80　nm　thick　film　was　studied　and　the　effects　of　film　thickness　on　crystallization　morphology　were　analyzed.　Finally　a　crystallization　process　model　based　on　the　relationship　of　the　crystallization　starting　temperature　and　heating　temperature　was　constructed　to　elucidate　how　the　solid-phase　crystallization　and　melt-cooling　crystallization　occurred　and　developed.　It　also　unified　the　crystallization　starting　temperature　under　static　conditions　and　the　crystallization　starting　temperature　under　laser　inducing　conditions.　(C)　2014　Elsevier　B.V.　All　rights　reserved.