A　series　of　V-doped　Ge2Sb2Te5　films　were　prepared　via　magnetron　co-sputtering.　The　V　content　ranged　from　3.3　to　20.1　at%,　as　determined　via　energy-dispersive　spectrometry.　The　influence　of　the　V　content　on　the　crystallization　behavior　and　electrical　properties　was　investigated　using　X-ray　diffraction,　electrical　resistivity　measurements　and　in　situ　transmission　electron　microscope　annealing.　The　results　indicated　that　adding　V　to　Ge2Sb2Te5　films　within　a　certain　amount　enhances　the　electrical　resistance　and　thermal　stability.　These　results　also　indicate　that　V　doping　leads　to　aphase　change　from　being　amorphous　to　a　face-centered　cubic　(fcc)　structure　below　350　degrees　C.　As　a　result,　V　doped　Ge2Sb2Te5　composite　films　can　be　considered　as　a　promising　material　for　phase　change　memory.　(C)　2014　Elsevier　B.V.　All　rights　reserved.