Single-crystal　hexagonal　wurtzite　GaN　nanowires　were　successfully　synthesized　by　using　plasma-enhanced　chemical　vapor　deposition　(PECVD)　via　vapor-liquid-solid　(V-L-S)　mechanism,　under　the　condition　of　non-ammonia　at　1050　degrees　C.　Raman　spectra　show　that　the　as-synthesized　nanowires　have　large　disorder　surface,　in　which　there　is　a　significantly　small　size　effect.　Furthermore,　it　is　also　observed　that　the　prepared　nanowires　have　typical　photoluminescence　characteristics　and　good　field　emission　properties.