Ta-doped　CeO2　buffer　layers　were　grown　on　the　home-made　textured　Ni-5W　substrates　for　YBCO　coated　conductors　by　a　simple　metal-organic　deposition　technique.　The　characterization　of　the　samples　was　discussed.　XPS　results　indicate　that　Ta5+　is　reduced　into　Ta4+　prior　to　Ce4+,　which　is　helpful　to　suppress　the　formation　of　holes　and　cracks　in　CeO2　films　from　reducing　Ce4+　into　Ce3+.　Additionally,　no　new　phase　is　found　by　doping　Ta　into　CeO2,　which　indicates　that　Ta4+　replaces　the　Ce4+　position　in　CeO2　lattice　to　form　Ce0.75Ta0.25O2.　The　Ce0.75Ta0.25O2　has　a　good　out-of-plane　and　in-plane　texture　FWHM　values　for　omega　scan　and　phi　scan　are　4.38　degrees　and　6.67　degrees,　respectively.　AES　measurements　show　that　no　Ni　element　is　detected　on　the　surface　of　Ce0.75Ta0.25O2　film,　and　a　one-layer　film　has　a　thickness　of　about　70　nm.　It　is　promising　that　the　presently　developed　Ce0.75Ta0.25O2　film　can　be　used　as　a　single　multi-functional　buffer　layer　for　coated　conductor.