We　systematically　measured　thermal　conductivity　of　GexSb(As)(10)Se90-x,　GexSb15Se85-x,　and　GexSb(As)(20)Se80-x　chalcogenide　glasses　by　measuring　their　Stokes　and　anti-Stokes　Raman　scattering　spectra　and　estimating　the　temperature　raised　by　laser　irradiation　via　the　ratio　of　Stoke　and　anti-Stokes　scattering　cross-section.　We　aimed　at　demonstrating　the　viability　of　Raman　scattering　method　for　thermal　conductivity　measurements,　and　understanding　the　role　of　chemical　composition　in　determining　thermal　conductivity　of　the　chalcogenide　glasses.　We　found　that,　while　the　values　of　the　thermal　conductivity　measured　in　the　paper　are　in　a　range　from　~0.078　to　1.120　Wm(-1)K(-1)　that　are　in　agreement　with　those　reported　data　in　the　literatures,　thermal　conductivity　increases　before　it　reaches　a　maximum　at　the　glass　with　chemically　stoichiometric　composition,　and　then　decreases　with　increasing　Ge　content.　We　ascribed　the　threshold　behavior　of　the　thermal　conductivity　to　the　demixing　of　the　structural　units　like　GeSe2,　As2Se3　and　Sb2Se3　from　the　main　glass　network.　The　present　study　demonstrated　that　Raman　scattering　method　is　simple　and　easy　to　measure　thermal　conductivity　of　the　material.　Copyright　(c)　2014　John　Wiley　&　Sons,　Ltd.