Zinc　oxide　(ZnO)　thin　films　were　deposited　on　a　sapphire　(001)　by　pulsed　laser　deposition　technique　at　room　temperature.　The　profound　changes　of　ZnO　thin　films　had　been　observed.　The　large　surface　morphology　difference　of　ZnO　thin　films　between　annealing　and　laser　irradiation　was　found.　Meanwhile,　the　dependence　of　photoluminescence　(PL)　spectra　on　annealing　temperature　and　laser　irradiation　energy　had　been　investigated.　As　the　annealing　temperature　and　laser　irradiation　energy　increased,　the　PL　intensity　of　visible　luminescence　decreased.　In　contrast,　the　intensity　of　ultraviolet　(UV)　emission　increased　largely　with　the　increasing　laser　energy.　However,　annealing　treatment　had　no　effect　on　the　UV　emission　behavior.　The　results　from　Hall　measurements　and　the　variation　of　visible　emission　indicated　annealing　and　laser　irradiation　had　the　same　influence　on　controlling　the　concentration　and　some　native　defects　in　ZnO　thin　films.　Besides,　the　thermal　and　photochemical　effects　of　KrF　excimer　led　to　an　enormous　accumulation　of　zinc　interstitial,　and　the　carrier　concentration　increased　up　to　six　orders　of　magnitude.　Furthermore,　the　origins　of　UV　and　visible　emissions　were　discussed.　(C)　2014　Laser　Institute　of　America.