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作者:

Wang, B. B. (Wang, B. B..) | Chen, C. C. (Chen, C. C..) | Zheng, K. (Zheng, K..) (学者:郑坤) | Cheng, Q. J. (Cheng, Q. J..) | Wang, L. (Wang, L..) | Wang, R. Z. (Wang, R. Z..) (学者:王如志)

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EI Scopus SCIE

摘要:

Carbon nanofilm and nanodots were grown by plasma-enhanced hot filament chemical vapor deposition using methane, hydrogen and nitrogen as the reactive gases. The results of field emission scanning electron microscopy, micro-Raman spectroscopy and X-ray photoelectron spectroscopy indicate that the amorphous carbon nanofilm and nanodots are formed without and with nitrogen, respectively. The formation of carbon nanofilm and nanodots is the consequence of different sputtering-etching effects. The photoluminescence (PL) of carbon nanofilm and nanodots was studied in a SPEX 1403 Ramalog system using a 325 nm He-Cd laser as an excitation source and the PL spectra show the PL bands centered at about 411 and 513 nm for the carbon nanofilm and 405 and 504 nm for the carbon nanodots. Simultaneously, the PL results also indicate that the intensity of PL bands of carbon nanofilm is lower than that of carbon nanodots. The generation of different PL bands was interpreted by the transition mechanism. The difference in the intensity of PL bands is related to the size of carbon nanodots. The electron field emission (EFE) characteristics of carbon nanofilm and nanodots were investigated in a high-vacuum system. The results show that Fowler-Nordhelm curves are composed of two or three straight lines and the carbon nanofilm can emit a high current density, which originate from the diversification of carbon nanodots. The difference in the EFE results of carbon nanofilm and nanodots is associated to the size and number of carbon nanodots. These results can enrich our knowledge about carbon-based nanomaterials and are important to fabricate the carbon-based solid nanodevices in the field of optoelectronics. (C) 2014 Elsevier Ltd. All rights reserved.

关键词:

Carbon dots Carbon nanofilm Electron field emission Photoluminescence

作者机构:

  • [ 1 ] [Wang, B. B.]Chongqing Univ Technol, Coll Chem & Chem Engn, Chongqing 400054, Peoples R China
  • [ 2 ] [Chen, C. C.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, R. Z.]Beijing Univ Technol, Coll Mat Sci & Engn, Beijing 100124, Peoples R China
  • [ 4 ] [Zheng, K.]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 5 ] [Wang, L.]Beijing Univ Technol, Inst Microstruct & Properties Adv Mat, Beijing 100124, Peoples R China
  • [ 6 ] [Cheng, Q. J.]Xiamen Univ, Sch Energy Res, Beijing 100124, Peoples R China

通讯作者信息:

  • [Wang, B. B.]Chongqing Univ Technol, Coll Chem & Chem Engn, 69 Hongguang Rd, Chongqing 400054, Peoples R China

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来源 :

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

ISSN: 1369-8001

年份: 2014

卷: 21

页码: 146-153

4 . 1 0 0

JCR@2022

ESI学科: MATERIALS SCIENCE;

ESI高被引阀值:256

JCR分区:2

中科院分区:3

被引次数:

WoS核心集被引频次: 3

SCOPUS被引频次: 3

ESI高被引论文在榜: 0 展开所有

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