Tantalum-pentoxide　(Ta2O5)　single　crystals　doped　with　Ti　were　grown　by　the　floating　zone　method.　X-ray　diffraction　(XRD)　characterization　indicates　that　the　crystal　symmetry　of　Ti-doped　Ta2O5　crystals　is　tetragonal.　The　dielectric　dissipation　is　decreased　and　the　dielectric　constant　is　greatly　enhanced　by　doping　Ti.　The　dielectric　permittivity　along　[100]　direction　of　(Ta2O5)(0.95)(TiO2)(0.05)　crystal　measured　at　1　MHz　and　room　temperature　is　711,　which　is　eight　times　more　than　that　of　Ta2O5　crystal.　Dielectric　properties　measurement　demonstrates　a　strongly　anisotropic　dielectric　constant　along　the　[100]　and　[001]　directions　of　Ti-doped　Ta2O5　crystals.　At　room　temperature　the　dielectric　constant　along　[100]　direction　is　about　twenty　times　of　that　along　[001]　direction　in　(Ta2O5)　0.95(TiO2)　0.05　crystal　while　only　three　times　in　Ta2O5　crystal.　The　results　suggest　that　Ti-doped　Ta2O5　crystal　materials　show　great　value　and　potential　for　both　of　theoretical　study　on　dielectrics　and　application　in　microelectronics　devices.　(C)　2013　Elsevier　B.　V.　All　rights　reserved.