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作者:

Ma Li (Ma Li.) (学者:李明爱) | Shen Guang-Di (Shen Guang-Di.) | Chen Yi-Xin (Chen Yi-Xin.) | Jiang Wen-Jing (Jiang Wen-Jing.) | Guo Wei-Ling (Guo Wei-Ling.) | Xu Chen (Xu Chen.) (学者:徐晨) | Gao Zhi-Yuan (Gao Zhi-Yuan.)

收录:

EI Scopus SCIE PKU CSCD

摘要:

Absorption of substrates, small angle for total reflection, and heat generated by photon blocking of electrode, all can lead to saturation and performance degradation of AlGaInP light emitting diodes(LEDs). In this paper, a novel LED composed of compound current spreading layer, compound DBR reflectors, and current blocking layer, is proposed, the saturation characteristic and lifetime are also tested. Simulation results show that there is only tiny invalid photocurrent through the electrode in the novel LEDs. Experimental results indicate that the novel LEDs have higher extraction efficiency and better saturation characteristics. Saturation current of the novel LEDs is as high as 110 mA, and the light intensity is enhanced by treble at saturation current as compared to the conventional LEDs. The accelerated aging test shows that the lifetime of the novel LEDs is as long as 17.8x10(4) hours, which means the novel LEDs have high reliability and can be used with high current.

关键词:

saturation characteristic current blocking layer lifetime

作者机构:

  • [ 1 ] [Ma Li]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Shen Guang-Di]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Chen Yi-Xin]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 4 ] [Jiang Wen-Jing]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 5 ] [Guo Wei-Ling]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 6 ] [Xu Chen]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 7 ] [Gao Zhi-Yuan]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

通讯作者信息:

  • [Shen Guang-Di]Beijing Univ Technol, Minist Educ, Key Lab Optoelect Technol, Beijing 100124, Peoples R China

电子邮件地址:

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来源 :

ACTA PHYSICA SINICA

ISSN: 1000-3290

年份: 2014

期: 3

卷: 63

1 . 0 0 0

JCR@2022

ESI学科: PHYSICS;

ESI高被引阀值:202

JCR分区:3

中科院分区:4

被引次数:

WoS核心集被引频次: 2

SCOPUS被引频次: 2

ESI高被引论文在榜: 0 展开所有

万方被引频次:

中文被引频次:

近30日浏览量: 2

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