In0.53Ga0.47As　films　were　grown　on　a　Si　(111)　substrate　with　two　different　InxGa1-xAs　buffer　layers　using　molecular　beam　epitaxy　(MBE).　The　effect　of　buffer　layer　on　the　as-grown　In0.53Ga0.47As　epi-layers　was　investigated　using　X-ray　diffraction　(XRD),　reciprocal　space　mapping　(RSM),　Raman　and　transmission　electron　microscopy　(TEM).　XRD　results　showed　that　the　crystalline　quality　of　the　as-grown　In0.53Ga0.47As　epi-layer　grown　on　the　Si　substrate,　using　a　low-temperature　In0.4Ga0.6As　buffer　layer　with　in　situ　annealing,　was　better　than　that　grown　using　In0.2Ga0.8As/In0.4Ga0.6As　buffer　layers.　Moreover,　the　misfit　strain　between　the　In0.53Ga0.47As　epi-layers　and　the　Si　substrate　was　nearly　completely　released　by　inserting　a　single　In0.4Ga0.6As　buffer　layer　grown　at　390　degrees　C　with　in　situ　annealing　at　560　degrees　C.　Specifically,　the　relaxation　value　of　the　In0.53Ga0.47As　epi-layer　with　the　single　In0.4Ga0.6As　buffer　layer　was　97.16%.　The　lattice　mismatch　strain　of　the　In0.53Ga0.47As　epi-layer　was　well　confined　to　the　In0.4Ga0.6As　buffer　layer,　without　being　extended　to　the　subsequently　grown　In0.53Ga0.47As　epi-layer　compared　with　its　counterpart　using　the　In0.2Ga0.8As/In0.4Ga0.6As　buffer　layers.　The　low-temperature　In0.4Ga0.6As　buffer　layer　shows　a　way　to　realize　fully　relaxed　In0.53Ga0.47As　films　with　a　high　crystalline　quality　on　the　Si　substrate.