The　photo-mask　is　a　basic　tool　in　lithography　process　which　has　a　crucial　role　in　the　development　of　modern　integrated　circuits.　This　paper　describes　a　new　method.　The　method　is　that　355　nm　ultraviolet　(UV)　laser　through　the　Cr-mask　directly　affects　nano-chromium　powder　between　Cr-mask　and　the　substrate　to　coat　a　layer　of　film　on　the　mask.　The　morphology　of　the　film　was　observed　under　the　optical　microscope,　surface　profiler　and　a　scanning　electron　microscope　(SEM).　The　roughness　of　the　centre　area　of　the　film　is　about　108　nm　and　the　average　thickness　of　the　film　is　about　308　nm　determined　by　laser　confocal　microscope　system.　Also　the　elemental　composition　of　the　film　contains　Cr　determined　by　energy　dispersive　spectroscopy　(EDS).　The　adhesion　of　the　film　was　good　tested　by　tape,　acid,　alkali　and　organic　solvents.　The　mechanism　of　coating　thin　film　was　also　discussed.　The　result　is　that　the　morphology,　thickness,　roughness　and　adhesion　of　the　film　are　good　and　the　film　is　obtained　through　the　process　of　amorphous　change.　Finally　the　conclusion　is　that　this　method　can　be　used　to　the　repair　of　Cr-mask　micro　transparent　defects.